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| Semiconductor IRFBC40, IRFBC42 6.2A and 5.4A, 600V, 1.2 and 1.6 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17426. January 1998 Features * 6.2A and 5.4A, 600V * rDS(ON) = 1.2 and 1.6 * Repetitive Avalanche Energy Rated * Simple Drive Requirements * Ease of Paralleling * Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER IRFBC40 IRFBC42 PACKAGE TO-220AB TO-220AB BRAND IRFBC40 IRFBC42 G Symbol D NOTE: When ordering, include the entire part number. S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 File Number 2157.2 5-1 IRFBC40, IRFBC42 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFBC40 Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 2) (See Figures 15,16) . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 600 600 6.2 3.9 25 20 125 1.0 570 -55 to 150 300 260 IRFBC42 600 600 5.4 3.4 22 20 125 1.0 570 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC o C o C CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS VGS = 0V, ID = 250A, (Figure 11) MIN 600 2.0 TYP MAX 4.0 25 250 UNITS V V A A Drain to Source Breakdown Voltage Gate to Source Threshold Voltage Zero Gate Voltage Drain Current VGS(TH) VGS = VDS, ID = 250A IDSS VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC On-State Drain Current (Note 4) IRFBC40 IRFBC42 Gate to Source Leakage Drain to Source On Resistance (Note 2) IRFBC40 IRFBC42 Forward Transconductance (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 6.2 5.4 100 A A nA IGSS rDS(ON) VGS = 20V VGS = 10V, ID = 3.4A, (Figures 9, 10) - gfs td(ON) tr td(OFF) tf Qg(TOT) VGS = 10V, ID = 6.2A, VDS = 0.7 x Rated BVDSS, (Figures 19, 20) Gate Charge is Essentially Independent of Qgs Operating Temperature Qgd CISS COSS CRSS VGS = 0V, VDS = 25V, f = 1.0MHz, (Figure 12) VDS 100V, IDS = 3.4A, (Figure 13) VDD = 300V, ID 6.2A, RG = 9.1, VGS = 10V, RL = 47, (Figures 17, 18) Switching Speeds are Essentially ndependent of Operating Temperature 4.7 - 0.97 1.2 70 13 18 55 20 40 5.5 20 1300 160 45 1.2 1.6 20 27 83 30 60 - S ns ns ns ns nC nC nC pF pF pF 5-2 IRFBC40, IRFBC42 Electrical Specifications PARAMETER Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL LD TEST CONDITIONS Measured From the Drain Modified MOSFET Lead, 6mm (0.25in) From Symbol Showing the Package to Center of Die Internal Devices Inductances Measured From the D Source Lead, 6mm LD (0.25in) From Header to Source Bonding Pad G LS S MIN - TYP 4.5 MAX - UNITS nH Internal Source Inductance LS - 7.5 - nH Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA Typical Socket Mount - - 1.0 80 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX 6.2 25 UNITS A A S Diode Source to Drain Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TJ = 25oC, ISD = 6.2A, VGS = 0V, (Figure 8) TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/s TJ = 25oC, ISD = 6.2A, dISD/dt = 100A/s 200 1.8 450 3.8 1.5 940 8.0 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 16mH, RG = 25, peak IAS = 6.8A. (Figures 15, 16). Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 10 0.8 0.6 0.4 0.2 0 ID, DRAIN CURRENT (A) 8 6 IRFBC40 4 IRFBC42 2 0 0 50 100 150 TC, CASE TEMPERATURE (oC) 25 50 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 5-3 IRFBC40, IRFBC42 Typical Performance Curves Unless Otherwise Specified (Continued) ZJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE (oC/W) 1 0.5 0.2 0.1 0.1 0.05 0.02 0.02 0.01 10-2 SINGLE PULSE PDM t1 t2 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 10-4 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) 1 10 10-3 10-5 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 102 IRFBC40 ID, DRAIN CURRENT (A) IRFBC42 10 IRFBC40 IRFBC42 10 OPERATION IN THIS REGION IS LIMITED BY rDS(ON) ID, DRAIN CURRENT (A) 10s 100s 8 VGS = 10V VGS = 6.0V 6 VGS = 5.0V 4 VGS = 5.5V 80s PULSE TEST 1ms 1 10ms TC = 25oC TJ = MAX RATED SINGLE PULSE 2 VGS = 4.5V VGS = 4.0V DC 103 0 0 0.1 1 102 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 120 180 240 VDS, DRAIN TO SOURCE VOLTAGE (V) 300 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 10 80s PULSE TEST 8 VGS =10V 10 VGS = 6.0V VGS = 5.5V VDS 100V 80s PULSE TEST ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1 6 VGS = 5.0V 4 TJ = 150oC 0.1 TJ = 25oC 2 VGS = 4.5V VGS = 4.0V 0 0 3 6 9 12 VDS, DRAIN TO SOURCE VOLTAGE (V) 15 10-2 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 5-4 IRFBC40, IRFBC42 Typical Performance Curves 102 ISD, SOURCE TO DRAIN CURRENT (A) DRAIN TO SOURCE ON RESISTANCE Unless Otherwise Specified (Continued) 5.0 80s PULSE TEST 4.0 10 TJ = 150oC TJ = 25oC 1 3.0 VGS = 10V 2.0 VGS = 20V 1.0 0.1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE TO DRAIN VOLTAGE (V) 1.5 0 6 12 18 ID, DRAIN CURRENT (A) 24 30 FIGURE 8. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 3.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 3.4A VGS = 10V 2.4 1.25 ID = 250A 1.15 1.8 1.05 1.2 0.95 0.6 0.85 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 0.75 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 3000 gfs, TRANSCONDUCTANCE (S) VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGD 10 VDS 100V 80s PULSE TEST TJ = 25oC 2400 C, CAPACITANCE (pF) 8 1800 CISS 6 TJ = 150oC 1200 COSS 600 CRSS 0 0 2 10 20 50 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 102 4 2 0 0 2 4 6 ID, DRAIN CURRENT (A) 8 10 FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 13. TRANSCONDUCTANCE vs DRAIN CURRENT 5-5 IRFBC40, IRFBC42 Typical Performance Curves 20 GATE TO SOURCE VOLTAGE (V) ID = 6.2A FOR TEST CIRCUIT, SEE FIGURES 19, 20 16 VDS = 120V 12 VDS = 240V VDS = 360V 8 Unless Otherwise Specified (Continued) 4 0 0 12 24 36 48 60 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS L tP VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP 0V RG + BVDSS VDS VDD IAS VDD IAS 0.01 0 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON td(ON) tr RL VDS 90% tOFF td(OFF) tf 90% + RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS 5-6 IRFBC40, IRFBC42 Test Circuits and Waveforms (Continued) CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD SAME TYPE AS DUT Qg(TOT) Qgd Qgs D VDS VGS 12V BATTERY 0.2F 50k 0.3F G DUT 0 IG(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 5-7 |
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